Insights into the Hydrogen‐Related Mechanism behind Defect Formation during Light‐ and Elevated‐Temperature‐Induced Degradation

By investigating the formation of light- and elevated-temperature-induced degradation (LeTID) defects under dark annealing conditions alongside boron–hydrogen complex, it is found that both formations are limited by presumably same reaction. Starting with this observation, two possible mechanisms LeTID defect formation, a hydrogen-related association dissociation process, discussed. Including current knowledge on hydrogen in silicon as well reverse reaction to mechanism seems be more likely: precursor composed being bound another complex. During annealing, dissociates binds its sink, which herein boron. The remaining complex recombination active leads thus observed degradation.